BD788 Series

4.0 A, 60 V PNP Bipolar Power Transistor

Catalog

4.0 A, 60 V PNP Bipolar Power Transistor

Part	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	Transistor Type	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor BD788G	60 V	150 °C	-65 °C	Through Hole	TO-126	40 hFE	4 A	50 MHz	15 W	100 µA	TO-126-3 TO-225AA	PNP	2.5 V
ON Semiconductor BD788	60 V	150 °C	-65 °C	Through Hole	TO-126	40 hFE	4 A	50 MHz	15 W	100 µA	TO-126-3 TO-225AA	PNP	2.5 V

Catalog

4.0 A, 60 V PNP Bipolar Power Transistor

Key Features

• Low Collector-Emitter Sustaining Voltage VCEO(sus)60 Vdc (Min) BD787, BD788

• High Current-Gain Bandwidth Product fT= 50 MHz (Min) @ IC= 100 mAdc

• Collector-Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc

• Pb-Free Packages are Available

Description

The 4 A, 60 V PNP Bipolar Power Transistor is designed for lower power audio amplifier and low current, high speed switching applications. The BD787 and BD788 are complementary devices.