IRFI510 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 4.5A TO220-3
| Part | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | FET Type | Mounting Type | Power Dissipation (Max) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 10 V | 20 V | 4 V | 100 V | 540 mOhm | -55 °C | 175 ░C | TO-220-3 | N-Channel | Through Hole | 27 W | TO-220-3 Full Pack Isolated Tab | 4.5 A | MOSFET (Metal Oxide) | 180 pF | 8.3 nC |