SI4056 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 5.9A/8.3A 8SOIC
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Power Dissipation (Max) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | FET Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | 2.5 W 5 W | MOSFET (Metal Oxide) | -55 °C | 150 °C | 8-SOIC | 1330 pF | 29 nC | N-Channel | 20 V | 5.9 A 8.3 A | 2.5 V | 29.2 mOhm | 100 V | Surface Mount |