Catalog
NPN Darlington Transistor
Description
AI
NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03.
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NPN Darlington Transistor
NPN Darlington Transistor
| Part | Current - Collector (Ic) (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Current - Collector Cutoff (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition | Mounting Type | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 800 mA | -55 °C | 150 °C | 500 nA | 1.5 V | 125 MHz | Surface Mount | 1 W | 80 V | 10000 | TO-261-4 TO-261AA | SOT-223-4 |