BD675 Series

Medium Power NPN Darlington Bipolar Power Transistor

Catalog

Medium Power NPN Darlington Bipolar Power Transistor

Part	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic [Max]
ON Semiconductor BD675	45 V	750	40 W	4 A	TO-126-3 TO-225AA	Through Hole	-55 °C	150 °C	2.5 V	500 çA	TO-126
ON Semiconductor BD675A	45 V	750	40 W	4 A	TO-126-3 TO-225AA	Through Hole	-55 °C	150 °C		500 çA	TO-126	2.8 V
ON Semiconductor BD675G	45 V	750	40 W	4 A	TO-126-3 TO-225AA	Through Hole	-55 °C	150 °C	2.5 V	500 çA	TO-126

Medium Power NPN Darlington Bipolar Power Transistor

• High DC Current Gain hFE= 750 (Min) @ IC= 1.5 and 2.0 Adc

• Monolithic Construction

• BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682

• BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803

• Pb-Free Packages are Available

The Medium Power NPN Darlington Bipolar Power Transistor is for use as output devices in complementary general-purpose amplifier applications.