SIT1566 Series

Manufacturer: SiTime

Catalog

TCXO OSCILLATORS -40 TO 85C, 1508, 5PPM, 1.8V, 0.032768MHZ, DEFAULT

Part	Type	Frequency Stability	Package / Case	Size / Dimension [y]	Size / Dimension [x]	Size / Dimension [x]	Size / Dimension [y]	Supplier Device Package [x]	Supplier Device Package [y]	Supplier Device Package	Frequency	Height - Seated (Max) [Max]	Height - Seated (Max) [Max]	Base Resonator	Mounting Type	Voltage - Supply	Output	Operating Temperature [Max]	Operating Temperature [Min]	Current - Supply (Max) [Max]	Voltage - Supply [Max]	Voltage - Supply [Min]
SiTime SIT1566AI-JE-18E-32.768E	TCXO	5 ppm	4-UFBGA CSPBGA	0.84 mm	1.54 mm	0.061 in	0.033 "	1.54	0.84	4-CSP	0.032768 MHz	0.6 mm	0.024 in	MEMS	Surface Mount	1.8 V	LVCMOS	85 °C	-40 C	5.3 µA
SiTime SIT1566AC-JV-18E-32.768E	TCXO	3 ppm	4-UFBGA CSPBGA	0.84 mm	1.54 mm	0.061 in	0.033 "	1.54	0.84	4-CSP	0.032768 MHz	0.6 mm	0.024 in	MEMS	Surface Mount	1.8 V	LVCMOS	70 °C	-20 ░C	5.3 µA
SiTime SIT1566AI-JE-30E-32.768E	TCXO	5 ppm	4-UFBGA CSPBGA	0.84 mm	1.54 mm	0.061 in	0.033 "	1.54	0.84	4-CSP	0.032768 MHz	0.6 mm	0.024 in	MEMS	Surface Mount	3 V	LVCMOS	85 °C	-40 C	5.3 µA
SiTime SIT1566AI-JV-18E-32.768E	TCXO	3 ppm	4-UFBGA CSPBGA	0.84 mm	1.54 mm	0.061 in	0.033 "	1.54	0.84	4-CSP	0.032768 MHz	0.6 mm	0.024 in	MEMS	Surface Mount	1.8 V	LVCMOS	85 °C	-40 C	5.3 µA
SiTime SIT1566AC-JV-XXE-32.768E	TCXO	3 ppm	4-UFBGA CSPBGA	0.8 mm	1.5 mm	0.059 in	0.031 in	1.54	0.84	4-CSP	0.032768 MHz	0.6 mm	0.024 in	MEMS	Surface Mount		LVCMOS	70 °C	-20 ░C	5.3 µA	3.3 V	1.8 V
SiTime SIT1566AC-JV-XXE-32.768D	TCXO	3 ppm	4-UFBGA CSPBGA	0.84 mm	1.54 mm	0.061 in	0.033 "	1.54	0.84	4-CSP	0.032768 MHz	0.6 mm	0.024 in	MEMS	Surface Mount		LVCMOS	70 °C	-20 ░C	5.3 µA	3.3 V	1.8 V
SiTime SIT1566AC-JE-18E-32.768E	TCXO	5 ppm	4-UFBGA CSPBGA	0.84 mm	1.54 mm	0.061 in	0.033 "	1.54	0.84	4-CSP	0.032768 MHz	0.6 mm	0.024 in	MEMS	Surface Mount	1.8 V	LVCMOS	70 °C	-20 ░C	5.3 µA
SiTime SIT1566AI-JE-DCC-32.768	TCXO	5 ppm	4-UFBGA CSPBGA	0.84 mm	1.54 mm	0.061 in	0.033 "	1.54	0.84	4-CSP	0.032768 MHz	0.6 mm	0.024 in	MEMS	Surface Mount	1.8 V	LVCMOS	85 °C	-40 C	5.3 µA