NCV51752 Series

Automotive 3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver with Integrated Negative Bias Control

Catalog

Automotive 3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver with Integrated Negative Bias Control

Part	Qualification	Mounting Type	Common Mode Transient Immunity (Min) [Min]	Grade	Technology	Pulse Width Distortion (Max)	Current - Peak Output	Propagation Delay tpLH / tpHL (Max) [custom]	Propagation Delay tpLH / tpHL (Max) [custom]	Current - Output High, Low [custom]	Current - Output High, Low [custom]	Package / Case	Package / Case [y]	Package / Case [x]	Number of Channels	Voltage - Isolation	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Approval Agency	Voltage - Output Supply [Max]	Voltage - Output Supply [Min]
ON Semiconductor NCV51752CDDR2G	AEC-Q100	Surface Mount	200 V/ns	Automotive	Capacitive Coupling	5 ns	4.5 A 9 A	55 ns	55 ns	9 A	4.5 A	8-SOIC	3.9 mm	0.154 in	1	3750 Vrms	8-SOIC	125 °C	-40 °C	CQC UL VDE	30 V	13.5 V

Catalog

Automotive 3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver with Integrated Negative Bias Control

Key Features

• 4.5-A Peak Source, 9-A Peak Sink Output Current

• Integrated Negative Bias Control -2/-3/-4/-5-V

• 36 ns Propagation Delay with 5 ns Max Delay Matching

• 3-V to 20-V Input Supply Voltage

• 200V/ns dV/dt Immunity

• 3.75 kVRMS Isolation for 1 Minute (per UL1577 Requirements)

• UVLO options 6-V and 8-V for MOSFET, 12-V and 17-V for SiC

Description

The NCV51752 is a family of isolated single-channel gate driver with 4.5-A/9-A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs and SiC MOSFET power switches. The NCV51752 offers short and matched propagation delays. For improved reliability, dV/dt immunity and even fasterturn−off, the NCV51752 can utilize to generate a negative bias rail. The NCV51752 is available in a 4 mm SOIC-8 package and can support isolation voltage up to 3.75 kVRMS. The NCV51752 offers other important protection function such as independent under-voltage lockout for both-side driver.