W9425G6 Series
Manufacturer: Winbond Electronics
IC DRAM 256MBIT PAR 66TSOP II
| Part | Access Time | Memory Interface | Supplier Device Package | Memory Size | Memory Format | Package / Case [z] | Package / Case | Package / Case [y] | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Organization | Operating Temperature [Min] | Operating Temperature [Max] | Write Cycle Time - Word, Page | Mounting Type | Clock Frequency | Memory Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Winbond Electronics | 55 ns | Parallel | 66-TSOP II | 256 Gbit | DRAM | 0.4 in | 66-TSSOP | 10.16 mm | 2.3 V | 2.7 V | 16M x 16 | 0 °C | 70 °C | 15 ns | Surface Mount | 250 MHz | Volatile |
Winbond Electronics | 55 ns | Parallel | 66-TSOP II | 256 Gbit | DRAM | 0.4 in | 66-TSSOP | 10.16 mm | 2.3 V | 2.7 V | 16M x 16 | 0 °C | 70 °C | 15 ns | Surface Mount | 200 MHz | Volatile |
Winbond Electronics | 52 ns | Parallel | 66-TSOP II | 256 Gbit | DRAM | 0.4 in | 66-TSSOP | 10.16 mm | 2.4 V | 2.7 V | 16M x 16 | 0 °C | 70 °C | 15 ns | Surface Mount | 250 MHz | Volatile |
Winbond Electronics | 55 ns | Parallel | 66-TSOP II | 256 Gbit | DRAM | 0.4 in | 66-TSSOP | 10.16 mm | 2.3 V | 2.7 V | 16M x 16 | -40 ¯C | 85 C | 15 ns | Surface Mount | 200 MHz | Volatile |
Winbond Electronics | 55 ns | Parallel | 66-TSOP II | 256 Gbit | DRAM | 0.4 in | 66-TSSOP | 10.16 mm | 2.3 V | 2.7 V | 16M x 16 | -40 ¯C | 85 C | 15 ns | Surface Mount | 200 MHz | Volatile |
Winbond Electronics | 55 ns | Parallel | 60-TFBGA (8x13) | 256 Gbit | DRAM | 60-TFBGA | 2.3 V | 2.7 V | 16M x 16 | 0 °C | 70 °C | 15 ns | Surface Mount | 200 MHz | Volatile | ||
Winbond Electronics | 55 ns | Parallel | 60-TFBGA (8x13) | 256 Gbit | DRAM | 60-TFBGA | 2.3 V | 2.7 V | 16M x 16 | -40 ¯C | 85 C | 15 ns | Surface Mount | 200 MHz | Volatile | ||
Winbond Electronics | 55 ns | Parallel | 60-TFBGA (8x13) | 256 Gbit | DRAM | 60-TFBGA | 2.3 V | 2.7 V | 16M x 16 | 0 °C | 70 °C | 15 ns | Surface Mount | 200 MHz | Volatile | ||
Winbond Electronics | 55 ns | Parallel | 66-TSOP II | 256 Gbit | DRAM | 0.4 in | 66-TSSOP | 10.16 mm | 2.3 V | 2.7 V | 16M x 16 | 0 °C | 70 °C | 15 ns | Surface Mount | 200 MHz | Volatile |
Winbond Electronics | 55 ns | Parallel | 60-TFBGA (8x13) | 256 Gbit | DRAM | 60-TFBGA | 2.3 V | 2.7 V | 16M x 16 | -40 ¯C | 85 C | 15 ns | Surface Mount | 200 MHz | Volatile |