FDMS3600S Series
Asymmetric Dual N-Channel MOSFET PowerTrench<sup>®</sup> Power Stage, 25V
Manufacturer: ON Semiconductor
Catalog
Asymmetric Dual N-Channel MOSFET PowerTrench<sup>®</sup> Power Stage, 25V
Key Features
• Q1: N-ChannelMaximum RDS(on)= 5.6 mΩ at VGS= 10 V, ID= 15 AMaximum RDS(on)= 8.1 mΩ at VGS= 4.5 V, ID= 14 A
• Q2: N-ChannelMaximum RDS(on)= 1.6 mΩ at VGS= 10 V, ID= 30 AMaximum RDS(on)= 2.4 mΩ at VGS= 4.5 V, ID= 25 A
• Low inductance packaging shortens rise/fall times, resulting in lower switching losses
• MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
• RoHS Compliant
Description
AI
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
