FDH50N50 Series

Power MOSFET, N-Channel, UniFETTM, 500 V, 48 A, 105 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, UniFETTM, 500 V, 48 A, 105 mΩ, TO-247

Part	Power Dissipation (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package
ON Semiconductor FDH50N50-F133	625 W	N-Channel	10 V	500 V	MOSFET (Metal Oxide)	TO-247-3	20 V	48 A	Through Hole	105 mOhm	6460 pF	5 V	-55 °C	150 °C	137 nC	TO-247-3

Catalog

Power MOSFET, N-Channel, UniFETTM, 500 V, 48 A, 105 mΩ, TO-247

Key Features

• RDS(on)= 105mΩ ( Max.)@ VGS= 10V, ID= 24A

• Low gate charge ( Typ. 105nC)

• Low Crss( Typ. 50pF)

• 100% avalanche tested

• Improved dv/dt capability

Description

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.