2SC4793 Series

Catalog

TRANS NPN 230V 1A TO220NIS

Part	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature
Toshiba Semiconductor and Storage 2SC4793(LBSAN,F,M)	100 MHz	1 A	230 V	TO-220-3 Full Pack	1 µA	TO-220NIS	2 W	1.5 V	Through Hole	NPN	100	150 °C
Toshiba Semiconductor and Storage 2SC4793,HFEF(M	100 MHz	1 A	230 V	TO-220-3 Full Pack	1 µA	TO-220NIS	2 W	1.5 V	Through Hole	NPN	100	150 °C
Toshiba Semiconductor and Storage 2SC4793(F,M)	100 MHz	1 A	230 V	TO-220-3 Full Pack	1 µA	TO-220NIS	2 W	1.5 V	Through Hole	NPN	100	150 °C
Toshiba Semiconductor and Storage 2SC4793,F(J	100 MHz	1 A	230 V	TO-220-3 Full Pack	1 µA	TO-220NIS	2 W	1.5 V	Through Hole	NPN	100	150 °C
Toshiba Semiconductor and Storage 2SC4793,YHF(J	100 MHz	1 A	230 V	TO-220-3 Full Pack	1 µA	TO-220NIS	2 W	1.5 V	Through Hole	NPN	100	150 °C
Toshiba Semiconductor and Storage 2SC4793,HFEF(J	100 MHz	1 A	230 V	TO-220-3 Full Pack	1 µA	TO-220NIS	2 W	1.5 V	Through Hole	NPN	100	150 °C
Toshiba Semiconductor and Storage 2SC4793,TOA1F(J	100 MHz	1 A	230 V	TO-220-3 Full Pack	1 µA	TO-220NIS	2 W	1.5 V	Through Hole	NPN	100	150 °C
Toshiba Semiconductor and Storage 2SC4793(PAIO,F,M)	100 MHz	1 A	230 V	TO-220-3 Full Pack	1 µA	TO-220NIS	2 W	1.5 V	Through Hole	NPN	100	150 °C