NVBG040N120M3S Series

Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L

Catalog

Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L

Part	Vgs (Max) [Min]	Vgs (Max) [Max]	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Qualification	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Grade	FET Type	Vgs(th) (Max) @ Id
ON Semiconductor NVBG040N120M3S	-10 V	22 V	263 W	1200 V	18 V	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	57 A	1700 pF	D2PAK-7	Surface Mount	AEC-Q101	54 mOhm	-55 °C	175 ░C	75 nC	SiC (Silicon Carbide Junction Transistor)	Automotive	N-Channel	4.4 V

Catalog

Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L

Key Features

• Typical RDS(on) = 40mΩ at Vgs =18V, Id = 25A

• Qualified for Automotive According to AEC−Q101

• New M3S technology: 40.8mohm RDS(ON) with low EON and EOFF losses

• 15V to 18V Gate Drive

• Devices are Pb−Free and are RoHS Compliant

Description

1200V M3S planar EliteSiC MOSFET is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.