BUK9Y25 Series

Catalog

BUK9Y25-80E - N-CHANNEL 80 V, 27 MΩ LOGIC LEVEL MOSFET IN LFPAK56@EN-US SOIC 4-PIN

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Technology	Qualification	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP BUK9Y25-80E,115	10 V	5 V	-55 °C	175 ░C	Automotive	MOSFET (Metal Oxide)	AEC-Q101	95 W	2703 pF	N-Channel	SC-100 SOT-669	Surface Mount	2.1 V	80 V	27 mOhm	17.1 nC	10 V	37 A	LFPAK56 Power-SO8
Freescale Semiconductor - NXP BUK9Y25-60E,115			-55 °C	175 ░C	Automotive	MOSFET (Metal Oxide)	AEC-Q101		1500 pF	N-Channel	SC-100 SOT-669	Surface Mount	2.1 V	60 V			10 V	34 A	LFPAK56 Power-SO8	21.5 mOhm	65 W	5 V	12 nC