SI4900 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET 2N-CH 60V 5.3A 8SOIC
| Part | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Power - Max [Max] | Technology | Drain to Source Voltage (Vdss) | FET Feature | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 5.3 A | 20 nC | 2 N-Channel (Dual) | 665 pF | 8-SOIC | -55 °C | 150 °C | 3.1 W | MOSFET (Metal Oxide) | 60 V | Logic Level Gate | 3 V | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 58 mOhm |
Vishay General Semiconductor - Diodes Division | 5.3 A | 20 nC | 2 N-Channel (Dual) | 665 pF | 8-SOIC | -55 °C | 150 °C | 3.1 W | MOSFET (Metal Oxide) | 60 V | Logic Level Gate | 3 V | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 58 mOhm |