SI7172 Series

Catalog

MOSFET N-CH 200V PPAK SO-8

Part	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SI7172ADP-T1-RE3	20 V	Surface Mount	19.5 nC	1110 pF	3.1 V	10 V	7.5 V	-55 °C	125 °C	5.3 A 17.2 A	PowerPAK® SO-8	50 mOhm	N-Channel	PowerPAK® SO-8	MOSFET (Metal Oxide)	200 V
Vishay General Semiconductor - Diodes Division SI7172DP-T1-GE3	20 V	Surface Mount			4 V			-55 °C	150 °C	25 A	PowerPAK® SO-8	70 mOhm	N-Channel	PowerPAK® SO-8	MOSFET (Metal Oxide)	200 V	6 V 10 V	2250 pF	77 nC	5.4 W 96 W