
Catalog
4-ch, 2-input, 2-V to 5.5-V NAND gates
Key Features
• 2-V to 5.5-V VCCOperationMax tpdof 6.5 ns at 5 VTypical VOLP(Output Ground Bounce)< 0.8 V at VCC= 3.3 V, TA= 25°CTypical VOHV(Output VOHUndershoot)> 2.3 V at VCC= 3.3 V, TA= 25°CSupport Mixed-Mode Voltage Operation onAll PortsIoffSupports Live Insertion, Partial Power Down Mode, and Back Drive ProtectionLatch-Up Performance Exceeds 250 mAPer JESD 17ESD Protection Exceeds JESD 222000-V Human-Body Model200-V Machine Model1000-V Charged-Device Model2-V to 5.5-V VCCOperationMax tpdof 6.5 ns at 5 VTypical VOLP(Output Ground Bounce)< 0.8 V at VCC= 3.3 V, TA= 25°CTypical VOHV(Output VOHUndershoot)> 2.3 V at VCC= 3.3 V, TA= 25°CSupport Mixed-Mode Voltage Operation onAll PortsIoffSupports Live Insertion, Partial Power Down Mode, and Back Drive ProtectionLatch-Up Performance Exceeds 250 mAPer JESD 17ESD Protection Exceeds JESD 222000-V Human-Body Model200-V Machine Model1000-V Charged-Device Model
Description
AI
These quadruple 2-input positive-NAND gates are designed for 2-V to 5.5-V VCCoperation.
The SNx4LV00A devices perform the boolean function Y =A ● Bor Y =A+Bin positive logic.
These quadruple 2-input positive-NAND gates are designed for 2-V to 5.5-V VCCoperation.
The SNx4LV00A devices perform the boolean function Y =A ● Bor Y =A+Bin positive logic.