IRFIBE20 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 800V 1.4A TO220-3
| Part | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | FET Type | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 1.4 A | 38 nC | 20 V | TO-220-3 Full Pack Isolated Tab | 530 pF | MOSFET (Metal Oxide) | N-Channel | TO-220-3 | Through Hole | 6.5 Ohm | 800 V | -55 °C | 150 °C | 4 V | 10 V |
Vishay General Semiconductor - Diodes Division | 1.4 A | 38 nC | 20 V | TO-220-3 Full Pack Isolated Tab | 530 pF | MOSFET (Metal Oxide) | N-Channel | TO-220-3 | Through Hole | 6.5 Ohm | 800 V | -55 °C | 150 °C | 4 V | 10 V |