Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/4.7 kΩ, SOT-353(USV)
Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/4.7 kΩ, SOT-353(USV)
Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/4.7 kΩ, SOT-353(USV)
| Part | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Package / Case | Power - Max [Max] | Mounting Type | Supplier Device Package | Transistor Type | Current - Collector Cutoff (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 50 V | 100 mA | 5-TSSOP SC-70-5 SOT-353 | 200 mW | Surface Mount | USV | 2 NPN - Pre-Biased (Dual) | 500 nA | 300 mV | 4.7 kOhms | 4.7 kOhms | 250 MHz | 30 |
 Toshiba Semiconductor and Storage | 50 V | 100 mA | SOT-553 | 100 mW | Surface Mount | ESV | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 100 nA | 300 mV | 4.7 kOhms | 4.7 kOhms | 250 MHz | 30 |