
Catalog
Single 0.8-V to 3.6-V low power inverter
Key Features
• Available in the Ultra Small 0.64 mm2Package (DPW) with 0.5-mm PitchLow Static-Power Consumption(ICC= 0.9 μA Max)Low Dynamic-Power Consumption(Cpd= 4.1 pF Typ at 3.3 V)Low Input Capacitance (Ci= 1.5 pF Typ)Low Noise − Overshoot and Undershoot<10% of VCCIoffSupports Live Insertion, Partial-Power-Down Mode, and Back-Drive ProtectionInput Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at the Input(Vhys= 250 mV Typ at 3.3 V)Wide Operating VCCRange of 0.8 V to 3.6 VOptimized for 3.3-V Operation3.6-V I/O Tolerant to Support Mixed-Mode Signal Operationtpd= 3.9 ns Max at 3.3 VSuitable for Point-to-Point ApplicationsLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Performance Tested Per JESD 222000-V Human-Body Model(A114-B, Class II)1000-V Charged-Device Model (C101)Available in the Ultra Small 0.64 mm2Package (DPW) with 0.5-mm PitchLow Static-Power Consumption(ICC= 0.9 μA Max)Low Dynamic-Power Consumption(Cpd= 4.1 pF Typ at 3.3 V)Low Input Capacitance (Ci= 1.5 pF Typ)Low Noise − Overshoot and Undershoot<10% of VCCIoffSupports Live Insertion, Partial-Power-Down Mode, and Back-Drive ProtectionInput Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at the Input(Vhys= 250 mV Typ at 3.3 V)Wide Operating VCCRange of 0.8 V to 3.6 VOptimized for 3.3-V Operation3.6-V I/O Tolerant to Support Mixed-Mode Signal Operationtpd= 3.9 ns Max at 3.3 VSuitable for Point-to-Point ApplicationsLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Performance Tested Per JESD 222000-V Human-Body Model(A114-B, Class II)1000-V Charged-Device Model (C101)
Description
AI
The SN74AUP1G04 device is a single inverter gate performs the Boolean function Y =A.
The SN74AUP1G04 device is a single inverter gate performs the Boolean function Y =A.