FDZ375P Series

P-Channel 1.5V Specified PowerTrench® Thin WL-CSP MOSFET -20V, -3.7A, 78mΩ

Catalog

P-Channel 1.5V Specified PowerTrench® Thin WL-CSP MOSFET -20V, -3.7A, 78mΩ

Part	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Power Dissipation (Max)	Technology	Supplier Device Package
ON Semiconductor FDZ375P	20 V	Surface Mount	865 pF	1.5 V 4.5 V	P-Channel	3.7 A	78 mOhm	4-XFBGA WLCSP	-55 °C	150 °C	1.2 V	15 nC	8 V	1.7 W	MOSFET (Metal Oxide)	4-WLCSP (1x1)

Catalog

P-Channel 1.5V Specified PowerTrench® Thin WL-CSP MOSFET -20V, -3.7A, 78mΩ

Key Features

• Max rDS(on)= 78 mΩat VGS= -4.5 V, ID= -2.0 A

• Max rDS(on)= 92 mΩ at VGS= -2.5 V, ID= -1.5 A

• Max rDS(on)= 112 mΩ at VGS= -1.8 V, ID= -1.0 A

• Max rDS(on)= 150 mΩat VGS= -1.5 V, ID= -1.0 A

• Occupies only 1.0 mm2 of PCB area. Less than 30% of the area of 2 x 2 BGA

• Ultra-thin package: less than 0.4 mm height when mounted to PCB

• RoHS Compliant

Description

Designed on an advanced 1.5 V PowerTrench®process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ375P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).