IRFD120 Series

Catalog

MOSFET N-CH 100V 1.3A 4DIP

Part	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division IRFD120PBF	N-Channel	100 V	16 nC	-55 °C	175 ░C	Through Hole	1.3 A	270 mOhm	4 V	MOSFET (Metal Oxide)	10 V	4-DIP (0.300" 7.62mm)	1.3 W	20 V	360 pF
Vishay General Semiconductor - Diodes Division IRFD120	N-Channel	100 V	16 nC	-55 °C	175 ░C	Through Hole	1.3 A	270 mOhm	4 V	MOSFET (Metal Oxide)	10 V	4-DIP (0.300" 7.62mm)	1.3 W	20 V	360 pF