TK17A80W Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 800 V, 0.29 Ω@10V, TO-220SIS, DTMOSⅣ
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Mounting Type | Power Dissipation (Max) | Supplier Device Package | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Operating Temperature | Technology | Vgs (Max) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 32 nC | 10 V | 800 V | Through Hole | 45 W | TO-220SIS | N-Channel | 2050 pF | 290 mOhm | 150 °C | MOSFET (Metal Oxide) | 20 V | TO-220-3 Full Pack | 17 A | 4 V |