BUK7Y9R9-80E Series

N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56

Manufacturer: Freescale Semiconductor - NXP

Catalog

N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56

Part	FET Type	Vgs (Max)	Technology	Package / Case	Mounting Type	Grade	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Qualification
Freescale Semiconductor - NXP BUK7Y9R9-80EX	N-Channel	20 V	MOSFET (Metal Oxide)	SC-100 SOT-669	Surface Mount	Automotive	89 A	51.6 nC	498 pF	10 V	80 V	195 W	98 mOhm	LFPAK56 Power-SO8	-55 °C	175 ░C	AEC-Q101

Catalog

N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56

Description

Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.