SI2335 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET P-CH 12V 3.2A SOT23-3
| Part | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1225 pF | P-Channel | 12 V | -55 °C | 150 °C | SC-59 SOT-23-3 TO-236-3 | 1.8 V 4.5 V | MOSFET (Metal Oxide) | 450 mV | 750 mW | 51 mOhm | 3.2 A | 15 nC | 8 V | Surface Mount | SOT-23-3 (TO-236) |