GB02SHT01 Series
Manufacturer: GeneSiC Semiconductor
DIODE SIL CARBIDE 100V 4A TO46
| Part | Current - Average Rectified (Io) | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Package / Case | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Current - Reverse Leakage @ Vr | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 4 A | 76 pF | 0 ns | TO-206AB TO-46-3 Metal Can | 500 mA | 210 °C | -55 °C | TO-46 | 5 µA | SiC (Silicon Carbide) Schottky | 100 V | Through Hole |