R1EV58256BSCNBI Series

EEPROM

Manufacturer: Renesas Electronics Corporation

Catalog

EEPROM

Part	Mounting Type	Technology	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Type	Memory Organization	Write Cycle Time - Word, Page	Operating Temperature [Max]	Operating Temperature [Min]	Memory Format	Package / Case [x]	Package / Case	Package / Case	Access Time	Memory Size	Memory Interface	Supplier Device Package	Package / Case	Package / Case [y]
Renesas Electronics Corporation R1EV58256BSCNBI#B2	Surface Mount	EEPROM	2.7 V	5.5 V	Non-Volatile	32K x 8	10 ms	85 °C	-40 °C	EEPROM	8.4 mm	28-SOIC	0.33	85 ns	32 KB	Parallel	28-SOP
Renesas Electronics Corporation R1EV58256BDANBI#B2	Through Hole	EEPROM	2.7 V	5.5 V	Non-Volatile	32K x 8	10 ms	85 °C	-40 °C	EEPROM		28-DIP	0.6 in	85 ns	32 KB	Parallel	28-DIP	15.24 mm
Renesas Electronics Corporation R1EV58256BTCNBI#B2	Surface Mount	EEPROM	2.7 V	5.5 V	Non-Volatile	32K x 8	10 ms	85 °C	-40 °C	EEPROM	0.465 "	28-TSSOP		85 ns	32 KB	Parallel	28-TSOP I		11.8 mm
Renesas Electronics Corporation R1EV58256BSCNBI#S2	Surface Mount	EEPROM	2.7 V	5.5 V	Non-Volatile	32K x 8	10 ms	85 °C	-40 °C	EEPROM	8.4 mm	28-SOIC	0.33	85 ns	32 KB	Parallel	28-SOP

Catalog

EEPROM

Description

Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.