SIHW33 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 600V 33A TO247AD
| Part | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | FET Type | Vgs(th) (Max) @ Id | Technology | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 600 V | 99 mOhm | 10 V | 150 nC | TO-247AD | N-Channel | 4 V | MOSFET (Metal Oxide) | 3508 pF | 33 A | 30 V | -55 °C | 150 °C | 278 W | Through Hole | TO-3P-3 Full Pack |