FDD10AN06_F085 Series

N-Channel PowerTrench® MOSFET, 60V, 50A, 10.5mΩ

Catalog

N-Channel PowerTrench® MOSFET, 60V, 50A, 10.5mΩ

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Qualification	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDD10AN06A0-F085	TO-252AA	10 V	4 V	-55 °C	175 ░C	Automotive	MOSFET (Metal Oxide)	N-Channel	11 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	135 W	10.5 mOhm	20 V	60 V	Surface Mount	1840 pF

N-Channel PowerTrench® MOSFET, 60V, 50A, 10.5mΩ

• rDS(ON)= 9.4mΩ (Typ.), VGS= 10V, ID= 50A

• Qg(tot) = 28nC (Typ.), VGS= 10V

• Low Miller Charge

• Low Qrr Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

• RoHS Compliant

N-Channel PowerTrench®MOSFET, 60V, 50A, 10.5mΩ