SI2321 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET P-CH 20V 2.9A SOT23-3
| Part | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Supplier Device Package | FET Type | Mounting Type | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | SC-59 SOT-23-3 TO-236-3 | 13 nC | 2.9 A | -55 °C | 150 °C | 715 pF | 710 mW | 1.8 V 4.5 V | 57 mOhm | SOT-23-3 (TO-236) | P-Channel | Surface Mount | MOSFET (Metal Oxide) | 8 V | 900 mV | 20 V |