SSM6P47 Series

Catalog

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH X 2 MOSFET, -20 V, -4.0 A, 0.095 Ω@4.5V, SOT-1118(UDFN6)

Part	Configuration	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Operating Temperature	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage SSM6P47NU,LF	2 P-Channel (Dual)	20 V	6-µDFN (2x2)	Surface Mount	1 V	MOSFET (Metal Oxide)	4 A	1 W	150 °C	95 mOhm	290 pF	Logic Level Gate	4.6 nC