ISO5452-Q1 Series

The ISO5452-Q1 is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage. An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a Mute logic immediately blocks the output of the isolator and initiates a soft-turn-off procedure which disables OUTH, and pulls OUTL to low over a time span of2 μs. When OUTL reaches 2 V with respect to the most negative supply potential, VEE2, the gate driver output is pulled hard to VEE2potential, turning the IGBT immediately off. When desaturation is active, a fault signal is sent across the isolation barrier, pulling theFLToutput at the input side low and blocking the isolator input. Mute logic is activated through the soft-turn-off period. TheFLToutput condition is latched and can be reset only after RDY goes high, through a low-active pulse at theRSTinput. When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions. The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high. The ISO5452-Q1 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient. The ISO5452-Q1 is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage. An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a Mute logic immediately blocks the output of the isolator and initiates a soft-turn-off procedure which disables OUTH, and pulls OUTL to low over a time span of2 μs. When OUTL reaches 2 V with respect to the most negative supply potential, VEE2, the gate driver output is pulled hard to VEE2potential, turning the IGBT immediately off. When desaturation is active, a fault signal is sent across the isolation barrier, pulling theFLToutput at the input side low and blocking the isolator input. Mute logic is activated through the soft-turn-off period. TheFLToutput condition is latched and can be reset only after RDY goes high, through a low-active pulse at theRSTinput. When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions. The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high. The ISO5452-Q1 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.