SIHB10 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 400V 10A TO263
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | FET Type | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 5 V | 600 mOhm | N-Channel | 147 W | MOSFET (Metal Oxide) | 10 A | 10 V | 400 V | Surface Mount | 30 nC | 30 V | TO-263 (D2PAK) | 526 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |