NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ
NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ
NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ
| Part | Resistor - Emitter Base (R2) | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Mounting Type | Power - Max [Max] | Transistor Type | Resistor - Base (R1) | Vce Saturation (Max) @ Ib, Ic | Package / Case | Current - Collector Cutoff (Max) [Max] | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 4.7 kOhms | SOT-666 | 50 V | Surface Mount | 300 mW | 2 NPN - Pre-Biased (Dual) | 4.7 kOhms | 150 mV | SOT-563 SOT-666 | 1 µA | 100 mA | 30 |