GD25WD10 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 1MBIT SPI/DUAL 8USON
| Part | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Organization | Supplier Device Package | Access Time | Mounting Type | Memory Format | Memory Size | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Memory Type | Memory Interface | Technology | Clock Frequency | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | 1.65 V | 3.6 V | 128 K | 8-USON (1.5x1.5) | 12 ns | Surface Mount | FLASH | 1 Mbit | 8-XFDFN Exposed Pad | 85 C | -40 ¯C | Non-Volatile | SPI - Dual I/O | FLASH - NOR (SLC) | 100 MHz | 6 ms | 55 µs | ||
GigaDevice Semiconductor (HK) Limited | 1.65 V | 3.6 V | 128 K | 8-USON (1.5x1.5) | 6 ns | Surface Mount | FLASH | 1 Mbit | 8-XFDFN Exposed Pad | 85 C | -40 ¯C | Non-Volatile | SPI - Dual I/O | FLASH - NOR (SLC) | 104 MHz | 6 ms | 150 µs | ||
GigaDevice Semiconductor (HK) Limited | 1.65 V | 3.6 V | 128 K | 8-USON (1.5x1.5) | 12 ns | Surface Mount | FLASH | 1 Mbit | 8-XFDFN Exposed Pad | 85 C | -40 ¯C | Non-Volatile | SPI - Dual I/O | FLASH - NOR (SLC) | 100 MHz | 6 ms | 55 µs | ||
GigaDevice Semiconductor (HK) Limited | 1.65 V | 3.6 V | 128 K | 8-SOP | 6 ns | Surface Mount | FLASH | 1 Mbit | 8-SOIC | 85 C | -40 ¯C | Non-Volatile | SPI - Dual I/O | FLASH - NOR (SLC) | 104 MHz | 6 ms | 150 µs | 0.154 in | 3.9 mm |