SIHP186 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 600V 18A TO220AB
| Part | Supplier Device Package | Mounting Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Package / Case | Power Dissipation (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Technology | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | TO-220AB | Through Hole | 30 V | 600 V | 5 V | TO-220-3 | 156 W | N-Channel | 1081 pF | -55 °C | 150 °C | 18 A | 10 V | 193 mOhm | MOSFET (Metal Oxide) | 32 nC |