SI4564 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N/P-CH 40V 10A/9.2A 8SOIC
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Configuration | Rds On (Max) @ Id, Vgs | Supplier Device Package | Package / Case | Package / Case [y] | Package / Case [x] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Mounting Type | FET Feature | Power - Max | Technology | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | N and P-Channel | 17.5 mOhm | 8-SOIC | 8-SOIC | 3.9 mm | 0.154 in | 9.2 A 10 A | 40 V | 855 pF | 2 V | Surface Mount | Logic Level Gate | 3.1 W 3.2 W | MOSFET (Metal Oxide) | 31 nC |