SI5411 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 12V 25A PPAK
| Part | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Technology | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 25 A | Surface Mount | 12 V | 1.8 V 4.5 V | 3.1 W 31 W | 105 nC | 8 V | 4100 pF | 900 mV | MOSFET (Metal Oxide) | P-Channel | 150 °C | -50 °C | PowerPAK® ChipFET™ Single | PowerPAK® ChipFet Single | 8.2 mOhm |