SQSA80 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 80V 18A PPAK1212-8
| Part | Qualification | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Power Dissipation (Max) [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Package / Case | Grade | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | AEC-Q101 | 18 A | MOSFET (Metal Oxide) | 20 V | 1358 pF | 4.5 V 10 V | 21 nC | -55 °C | 175 ░C | Surface Mount | 62.5 W | PowerPAK® 1212-8 | 80 V | 2.5 V | 21 mOhm | PowerPAK® 1212-8 | Automotive | N-Channel |