Catalog
2.5V Drive Pch MOSFET
| Part | Power Dissipation (Max) | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Technology | FET Type | Package / Case | Mounting Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 1 W | 150 °C | 2.5 V | 4.5 V | 20 V | 760 pF | 2 V | 70 mOhm | 3 A | MOSFET (Metal Oxide) | P-Channel | 6-SMD Flat Leads | Surface Mount | TUMT6 | 8 nC | 12 V |
Description
AI
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.