SQJ868 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 40V 58A PPAK SO-8
| Part | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Power Dissipation (Max) | Qualification | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | FET Type | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Grade | Technology | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 55 nC | PowerPAK® SO-8 | 48 W | AEC-Q101 | 20 V | 2450 pF | -55 °C | 175 ░C | 58 A | 7.35 mOhm | 40 V | N-Channel | 3.5 V | 10 V | Surface Mount | Automotive | MOSFET (Metal Oxide) | PowerPAK® SO-8 |