FDD4141 Series

P-Channel PowerTrench® MOSFET, -40V, -50A, 12.3mΩ

Catalog

P-Channel PowerTrench® MOSFET, -40V, -50A, 12.3mΩ

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDD4141	P-Channel	50 nC	Surface Mount	-55 °C	150 °C	2.4 W 69 W	40 V	TO-252AA	4.5 V 10 V	MOSFET (Metal Oxide)	20 V	2775 pF	12.3 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 V	10.8 A	50 A

Catalog

P-Channel PowerTrench® MOSFET, -40V, -50A, 12.3mΩ

Key Features

• Maximum RDS(on)= 12.3mΩ at VGS= -10V, ID= -12.7A

• Maximum RDS(on)= 18.0mΩ at VGS= -4.5V, ID= -10.4A

• High performance trench technology for extremely low RDS(on)

• RoHS Compliant

Description

This P-Channel MOSFET has been produced using an proprietary PowerTrench® technology to deliver low RDS(on)and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.