CSD17501Q5A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package
Texas Instruments CSD17501Q5A	8-PowerTDFN	2630 pF	MOSFET (Metal Oxide)	4.5 V 10 V	1.8 V	-55 °C	150 °C	20 V	30 V	3.2 W	N-Channel	Surface Mount	100 A	17 nC	8-VSONP (5x6)

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm

Key Features

• Ultralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck in Networking, Telecom,and Computing SystemsOptimized for Synchronous FET ApplicationsUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck in Networking, Telecom,and Computing SystemsOptimized for Synchronous FET Applications

Description

The NexFET power MOSFET has been designed to minimize losses in power conversion applications. The NexFET power MOSFET has been designed to minimize losses in power conversion applications.