SI4913 Series

Catalog

MOSFET 2P-CH 20V 7.1A 8SOIC

Part	Drain to Source Voltage (Vdss)	Technology	Configuration	Rds On (Max) @ Id, Vgs [Max]	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	FET Feature	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI4913DY-T1-E3	20 V	MOSFET (Metal Oxide)	2 P-Channel	15 mOhm	1.1 W	-55 °C	150 °C	1 V	8-SOIC	3.9 mm	0.154 in	Surface Mount	Logic Level Gate	8-SOIC	65 nC	7.1 A
Vishay General Semiconductor - Diodes Division SI4913DY-T1-GE3	20 V	MOSFET (Metal Oxide)	2 P-Channel	15 mOhm	1.1 W	-55 °C	150 °C	1 V	8-SOIC	3.9 mm	0.154 in	Surface Mount	Logic Level Gate	8-SOIC	65 nC	7.1 A