NTHL075N065SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-3L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-3L

Part	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTHL075N065SC1	4.3 V	Through Hole	650 V	N-Channel	61 nC	85 mOhm	148 W	-55 °C	175 ░C	15 V 18 V	MOSFET (Metal Oxide)	TO-247-3	TO-247-3	1196 pF	38 A

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-3L

Key Features

• TJ = 175°C

• Ultra Low Gate Charge (Typ. Qg = 61 nC)

• High Speed Switching with Low Capacitance (Coss = 107 pF)

• Zero reverse recovery current of body diode

• Typ. RDS(on)= 57 mΩ at Vgs = 18V

• 100% UIL Tested

• RoHS Compliant

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.