SIHB33 Series

Catalog

MOSFET N-CH 600V 33A D2PAK

Part	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIHB33N60E-GE3	600 V	Surface Mount	150 nC	3508 pF	99 mOhm	4 V	10 V	N-Channel	278 W	MOSFET (Metal Oxide)	33 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	-55 °C	150 °C	TO-263 (D2PAK)