IRFIBC30 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 600V 2.5A TO220-3
| Part | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Package / Case | FET Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Technology | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 4 V | 10 V | 2.5 A | TO-220-3 Full Pack Isolated Tab | N-Channel | 20 V | -55 °C | 150 °C | Through Hole | MOSFET (Metal Oxide) | 35 W | 2.2 Ohm | 31 nC | 600 V | TO-220-3 |