High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -1.4 A, 0.251 Ω@10V, SOT-563(ES6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -1.4 A, 0.251 Ω@10V, SOT-563(ES6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -1.4 A, 0.251 Ω@10V, SOT-563(ES6)
| Part | Technology | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Package / Case | FET Type | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Operating Temperature | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 30 V | 500 mW | SOT-563 SOT-666 | P-Channel | Surface Mount | 137 pF | 4 V | 10 V | 150 °C | 2.6 V | 251 mOhm | 1.4 A | 20 V | ES6 |