SIHG30 Series

Catalog

MOSFET N-CH 600V 29A TO247AC

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIHG30N60E-E3	MOSFET (Metal Oxide)	10 V	TO-247AC	-55 °C	150 °C	30 V	Through Hole	N-Channel	2600 pF	29 A	600 V	125 mOhm	130 nC	TO-247-3	250 W	4 V
Vishay General Semiconductor - Diodes Division SIHG30N60E-GE3	MOSFET (Metal Oxide)	10 V	TO-247AC	-55 °C	150 °C	30 V	Through Hole	N-Channel	2600 pF	29 A	600 V	125 mOhm	130 nC	TO-247-3	250 W	4 V