SI4922 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 30V 8A 8SOIC
| Part | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Configuration | Power - Max [Max] | Technology | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 30 V | -55 °C | 150 °C | Surface Mount | 2070 pF | 8 A | 8-SOIC | 2 N-Channel (Dual) | 3.1 W | MOSFET (Metal Oxide) | 1.8 V | 62 nC | 16 mOhm | 8-SOIC | 3.9 mm | 0.154 in |