FDB035N10A Series

N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ

Catalog

N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDB035N10A	20 V	116 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	TO-263 (D2PAK)	10 V	100 V	-55 °C	175 ░C	333 W	3.5 mOhm	7295 pF	N-Channel	MOSFET (Metal Oxide)	Surface Mount	120 A

Catalog

N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ

Key Features

• RDS(on)= 3.0mΩ ( Typ.)@ VGS= 10V, ID= 75A

• Fast Switching Speed

• Low Gate Charge, QG= 89nC ( Typ.)

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.